data sheet semiconductor http://www.yeashin.com 1 rev.02 20121213 ek5a thru ek5j surf ace mount s u perfas t re ctifi e r voltage - 50 to 600 volts current - 5.0 ampere fe a t ures ?e for surface mou n ted appli c ations ?e high tempera t ure metall urgi cally bonded-no compre ssio n contacts a s foun d i n other diode- con s tructed r e cti f ier s ?e glass pa ssiv a ted jun c tion ?e built-in strain reli ef ?e easy pick and pl ace ?e plasti c p a ckage has und e rw riters l aboratory flammab ility c l assi fi cati on 9 4 v- o ?e comple te dev ice submer sible tempe r ature o f 260 c for 10 seconds in solder b a th high tempera t ur ?e e sol dering : 260 o c / 10 se cond s at te r m inals pb free produ ct a t av ailable : 99% s n abov e meet rohs ?e env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e ca se : jedec d o -214ab molded pl asti c ?e termina l s: solde r pla t ed, soldera b le per mil-std-750 , method 2026 ?e polari ty : indi ca te d by cathode band ?e stand ard packag i ng: 12mm tape (eia-481) ?e w e i ght: 0.007 ou nce, 0 . 21 gram m a xim u m r a ti ng s a n d electric a l ch a r a c teristi c s ratings a t 2 5 c am bient tempe r atur e u n less o t herw i se sp ecified. sing le ph ase, h a lf w a v e , 60 h z , re si stiv e or indu cti v e load. for cap a ci tiv e load, dera t e curr ent by 20%. e k 5 a e k 5 e e k 5 g e k 5 j uni ts m a x i mum recurre n t peak rev e rse v o ltage 5 0 1 0 0 1 5 0 2 0 0 3 0 0 4 0 0 6 0 0 v max i mum r m s vo ltage 3 5 7 0 1 0 5 1 4 0 2 1 0 2 8 0 4 2 0 v m a x i mum dc blo cking voltage 5 0 1 0 0 1 5 0 2 0 0 3 0 0 4 0 0 6 0 0 v m a x i mum a verage for w a rd rect if ie d current , at tl=75 j 5 . 0 a peak for w a rd surge current 8.3ms single ha lf sine w a v e super i mposed on r a ted l o ad(jedec method) 1 0 0 . 0 a m a x i mum i n stanta neous forw a r d vol t age a t 3 . 0 a 0 . 9 5 1 . 2 5 1 . 7 0 v m a xi mum dc rever s e cur r e nt t a =2 5 j a t rated dc blocking volt age t a =1 00 j 5.0 200 a a m a x i mum rev e rse recov e r y time (note 1) 35.0 ns t y pi cal juncti on c a paci tance (note 2) 50.0 pf t y pical therma l r esistance (note 3 ) r ja 18 j /w oper ati ng and sto r age tempe r atur e range tj -55 to +150 j notes: 1. rev e rse re cov e ry test condi tion s: if=0.5a , ir=1 .0 a, irr=0.25a 2. mea s ure d a t 1 m h z and appli ed v r = 4.0 v o lts. 3. 8 . 0 mm2 ( .0 13m m thi c k ) land area s. .12 8 (3.2 5 ) .1 0 8( 2.75 ) .012(.3 05 ) .006(.15 2 ) .008(.20 3 ) .00 2 (. 051 ) .0 5 0(1. 27 ) .030(0.76) smc/do-214ab unit:inch(mm) .245(6.22) .220(5.59) .280(7.11) .260(6.60) .103(2.62) .079(2.00) .320(8.13) .305(7.75) e k 5 b e k 5 c e k 5 d
http://www.yeashin.com 2 rev.02 20121213 ek5a thru ek5j device characteristics lead temperature, c o average for ward current , amper s forward current derating curve 120 50 60 70 80 90 100 110 5.0 100 10 1.0 0.1 0.01 typical reverse characteristics percent of rated peak inverse voltage, volts 2 4060806080100120140 instantaneous reverse current, ampers t j =75 c o t j =100 c o t j =25 c o maximum non-repetitive peak forward surge current peak for ward surge current , ampers 1 5 10 50 100 100 90 80 70 60 50 number of cycles at 60hz 8.3ms single half sine-wave jedc method capacitance, p f typical junction capacitance reverse voltage, volts 0.1 1 100 90 80 70 60 50 0 100 1000 10 t j =25c = 1.0m hz v = 50 v o f sig m p-p 1 noninductive pulse generator *note2 oscilloscope *note1 10 noninductive 50 noninductive 25 vdc (approx) notes: rise time=7ns max. input impedance= 1 megohm 22pf 1. rise time=10ns max. source impedance= 50 ohms 22pf 2. set time bas for 10ns/cm +0.5a 0 -0.25 -1.0 1cm t rr reverse recovery time characteristic and test diagram typical forward characteristics 100 10 1.0 0.1 0.01 instantaneous forward voltage, volts instantaneous forward current, ampers 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 50-200v 300-400v 600v t =25 c pulse width= 300 s 2% duty cycle j o single phase half wave 60hz resistive or inductive load p.c.b. mounted on 8.0x8.0mm copper land areas 40 30 20 10 110 130 150 140
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